preliminary information this p r e limi n a ry d a ta is p r o vided to a s s i s t y o u in the evalu a tion o f pro d u ct (s) c u r r e n t l y und e r d e v e l o pm ent . u n t i l a g il ent tec h n ologies rel e ase s t h i s pro d u ct fo r gen e ral sal e s , a g il e n t tec h no l o gi es rese rv es t h e righ t t o al t e r pric e s, s p ecifi c at io ns, feat u r es, cap abilitie s, f u n c tions , r e lea s e dates , a n d r e move avai lability of the pr odu c t(s ) at a n y t im e. revision date: 2 8 sept 2005 revision n u mbe r : 1 agilent AMMP-5024 100 khz ? 40 ghz traveling wave amplifier data sheet features ? 5x5mm sur f a ce m o un t p a c k age ? wide frequency r a ng e 100khz - 4 0 ghz ? p- 1db o f 23 dbm 12 3 7 5 6 4 8 gnd base package pin function 1 v g 2 v d 3 d e t o 4 r f ou t 5 d e t r 6 v d 7 v g 8 r f in ? high gain of 15 db ? 50 ? m a tc h on inp u t and o u tpu t ? inte grated output p o wer detector applications ? c o m m uni cat i o n sy st em s ? m i crowa v e i n s t rum e nt at i on ? optical systems ? b r oa dba n d a p p l i cat i ons re q u i r i ng fl at gai n g r ou p d e lay AMMP-5024 absolute maximum ratings [1] s y m b o l p a r a m e t e rs/ c o n d i t i o n s u n i t s m i n . m a x . v d 1 positive drain voltage v 8 v g gate supply volta g e v -3 0.5 d first stage drain c u rrent m a 1 5 0 0 p in cw input power dbm 23 t ch operating channe l temp. c + 1 5 0 t stg storage case temp. c - 6 5 + 1 5 0 t max maximum assem b ly temp (60 sec ma x) c + 3 0 0 note: 1. operation in ex cess of any one o f these conditions may result in permanent damag e to this device. description ag il ent?s ammp -5024 i s a b r oadb and p h emt gaas mmic twa de si gne d for m e dium o u t p ut pow e r a n d hi gh ga in o v er the f u l l 100 khz to 40 ghz f r eq uenc y rang e. t h e d e sig n emplo y s a 9-st age, cascade-c o nnected fet s t ructure to ensure flat ga in a n d p o w e r as w e l l as un ifor m gr o u p de lay. e - b e am litho graph y is u s ed to produce uniform gate lengths o f 0.15um and mbe tec hnolo gy as sures precis e semiconductor layer control .
AMMP-5024 dc specifications/physical properties [1] symbol paramet ers and test conditions units min. typ. max. i d drain supp ly current [v d =7 v, v g = set for i d typic a l] m a 2 0 0 ) ( 2 bs ch ? thermal resistance [2] [channel-to-back s ide at tch=150 c] c/w 14.5 notes: 1. ambient operat i onal temperature t a =25 c unles s otherwise noted. 2. thermal resistance ( c/watt) at a channel temper ature t( c) can b e estimated using the equation: (t) ? ch-bs x [t ( c) + 273] / [150 c + 273]. AMMP-5024 rf specifications [3,4] t a = 25 c, v d =7v, i d(q) = 200 ma, z in =z o =50 ? specifications symbol paramet ers and test conditions units m i n . t y p . m a x . freq operational freq uency g h z 0 . 0 0 0 0 0 1 4 0 gain small-si gna l gain [3, 4] d b 1 5 db 1 p ? output power at 1db gain compression [4] d b 2 2 3 ip third order intercept point [4] ; ? f=0.1ghz; pin=-6 dbm d b m 3 0 rlin input return loss [4] d b 1 0 rlout output return loss [4] d b 1 0 isolation min. reverse isolation db 28 3. small/large -si gnal data measur ed in wafer form t a = 25 c. this p r e limi n a ry d a ta is p r o vided to a s s i s t y o u in the evalu a tion o f pro d u ct (s) c u r r e n t l y und e r d e v e l o pm ent . u n t i l a g il ent tec h n ologies rel e ase s t h i s pro d u ct fo r gen e ral sal e s , a g il e n t tec h no l o gi es rese rv es t h e righ t t o al t e r pric e s, s p ecifi c at io ns, feat u r es, cap abilitie s, f u n c tions , r e lea s e dates , a n d r e move avai lability of the pr odu c t(s ) at a n y t im e. revision date: 2 8 sept 2005 revision n u mbe r : 1
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